EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.

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Transition times S 20 ns unless noted otherwise. All similar datashewt of the MME may be par- alleled. In- complete erasure will cause symptoms that can be misleading. After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms.

All input voltage levels, including the program pulse on chip-enable are TTL compatible. A new pattern can then be written into the device by following the programming procedure. The programming erpom is: Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. No pins should be left open.

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Full text of “IC Datasheet: EPROM – 1”

Capacitance Is guaranteed by periodic testing. This is done 8 bits a byte at a time. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. It is recommended that the Erom be kept out of direct sunlight. The transparent lid allows the user to expose the chip to ratasheet light to erase the bit pattern. The table of “Electrical Characteristics” provides conditions for actual device operation.


An opaque coating paint, tape, label, etc. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.


These are shown in Table I. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse. The distance from lamp to unit should be maintained at 1 inch. MMES may be programmed in parallel with the same data dattasheet this mode. When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.

Lamps lose intensity as they age. Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current.

datasehet This exposure discharges the floating gate to its initial state through induced photo current. Typical conditions are for operation at: An erasure system should be calibrated periodically. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. Multiple pulses are not needed but will not catasheet device damage. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.

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2716 – 2716 16K EPROM Datasheet

Extended expo- sure to room level fluorescent lighting will also cause erasure. To prevent damage the device it must not be inserted into a board with power applied. The MME e;rom packaged in a pin dual-in-line package with transparent lid. Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.

All bits will be at a “1” level output high in this initial state and after any full erasure.

Table II shows the 3 programming modes. Full text of ” IC Datasheet: